Growth of β-silicon carbide on silicon

• 1 June 1970
• journal article
• research article
• Published by International Union of Crystallography (IUCr) in Journal of Applied Crystallography
• Vol. 3  (3) , 172-174
• https://doi.org/10.1107/s0021889870005873

Abstract

Keywords

• TOPOGRAPHY
• SILICON
• PARTICULATE
• VACUUM
• SIC LAYERS
• ETHYLENE
• INDEX ORIENTATIONS
• EPITAXIC GROWTH