First order gain-coupled GaInAs/GaAs distributed feedback laser diodes patterned by focused ion beam implantation

23 September 1996

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 69 (13) , 1906-1908
https://doi.org/10.1063/1.117617

Abstract

Electrically pumped gain-coupled distributed feedback lasers with first order gratings have been fabricated on a (Ga,In)As/(Al,Ga)As separate confinement heterostructure by focused ion beam implantation and epitaxial overgrowth. The lasers are operating at room temperature at wavelengths around 950 nm. All investigated devices show single longitudinal mode emission at all operating conditions.

Keywords

GALLIUM ARSENIDE
ION IMPLANTATION
ROOM TEMPERATURE
OPERANT CONDITIONING
FIRST ORDER
DISTRIBUTED FEEDBACK LASER
FOCUSED ION BEAM

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