Large-area and visible response VPE InGaAs photodiodes
- 1 April 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 30 (4) , 395-400
- https://doi.org/10.1109/t-ed.1983.21134
Abstract
InGaAs photodiodes having diameters of 500 µm have been successfully fabricated by vapor-phase epitaxial techniques. Typical room-temperature performance characteristics at a bias voltage of -10 V are: quantum efficiency ≈80 percent (1 to 1.7 µm); dark current &ap120 nA; noise current &ap0.3 pA/Hz1/2; capacitance &ap5 pF; and response time &ap3 ns. The useful spectral range of standard 100-µm-diameter diodes has been extended to short Wavelengths (about 0.5 µm) by a reduction in the thickness of the InP capping layer. Quantum efficiencies near 70 percent have been observed at 0.7 µm.Keywords
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