Effects of Hydrogen Additive on Obtaining Residue‐Free Reactive Ion Etching of β ‐ SiC in Fluorinated Plasmas

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Abstract
Narrow‐pitch encapsulated Al lines are used as interconnect metallization in integrated circuits. We have measured the principal strain state of Al alloy lines passivated with silicon nitride directly as a function of temperature. We compare these results with calculations of the strain state in these lines using finite‐element modeling. The measured strain‐temperature behavior shows good fundamental agreement with finite‐element modeling, although the magnitude of the strains measured with x‐rays is less than that predicted by modeling due to voiding in the lines.

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