Scanning Tunneling Microscopy and Spectroscopy Studies of Single Wall Carbon Nanotubes
- 1 September 1998
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 13 (9) , 2380-2388
- https://doi.org/10.1557/jmr.1998.0331
Abstract
Scanning tunneling microscopy and spectroscopy have been used to characterize the atomic structure and tunneling density of states of individual single wall carbon nanotubes (SWNT's) and ropes containing many SWNT's. Analysis of atomically resolved SWNT images shows that the nanotubes consist of a wide range of diameters and helicities with no one structure clearly dominant. Tunneling spectroscopy measurements made simultaneously on atomically resolved SWNT's exhibit semiconducting and metallic behavior that depend predictably on helicity and diameter. In addition the band gaps of the semiconducting tubes were also found to depend inversely on diameter. These results are compared to theoretical predictions, and the implications of these studies as well as important future directions are discussed.Keywords
This publication has 30 references indexed in Scilit:
- Coulomb Interactions and Mesoscopic Effects in Carbon NanotubesPhysical Review Letters, 1997
- Individual single-wall carbon nanotubes as quantum wiresNature, 1997
- Structural and electronic properties of pentagon-heptagon pair defects in carbon nanotubesPhysical Review B, 1996
- Microscope studies of the morphology and structure of carbon nanotubesJournal of Materials Science, 1995
- Scanning tunneling spectroscopy of carbon nanotubesJournal of Materials Research, 1994
- Vapor-Condensation Generation and STM Analysis of Fullerene TubesScience, 1993
- New one-dimensional conductors: Graphitic microtubulesPhysical Review Letters, 1992
- Are fullerene tubules metallic?Physical Review Letters, 1992
- Internal structure and two-dimensional order of monolayer C60 molecules on gold substrateJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- bonding and energy-level alignment on metal and semiconductor surfacesPhysical Review B, 1991