Si/GexSi1−x/Si resonant tunneling diode doped by thermal boron source

• 1 March 1989
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology B
• Vol. 7  (2) , 327-331
• https://doi.org/10.1116/1.584743

Abstract

Keywords

• MOLECULAR BEAM EPITAXY
• RESONANT TUNNELING DIODE