Radiative and nonradiative lifetimes in n -type and p -type 1.6 μm InGaAs

26 April 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (9) , 358-359
https://doi.org/10.1049/el:19840245

Abstract

Radiative and nonradiative lifetimes were deduced from measurements of lifetime and efficiency in 1.6 μm InGaAs double-heterostructure active layers. The nonradiative rate is interpreted as due to the Auger effect. We find that the dominant Auger rate involves holes. This Auger rate increases with wavelength, accounting for the decrease in the temperature coefficient T₀ with wavelength in InGaAsP material.

Keywords

AUGER RATE
TEMPERATURE COEFFICIENT
RADIATIVE LIFETIMES
1.6 MICRON WAVELENGTH
INGAAS DOUBLE-HETEROSTRUCTURE ACTIVE LAYERS
III-V SEMICONDUCTORS
AUGER EFFECT
NONRADIATIVE LIFETIMES

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