Frequency-domain measurement of carrier escape times in MQW electro-absorption optical modulators
- 1 December 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 7 (12) , 1421-1423
- https://doi.org/10.1109/68.477269
Abstract
Frequency-domain measurement of carrier escape times in reverse-biased multiple-quantum wells (MQW's) is proposed and demonstrated. Measurement and analysis of opto-to-electrical (OE) frequency response give the escape times of both electrons and holes with excellent time resolution. Using this technique, we measured escape times in an InGaAs-InAlAs MQW electro-absorption modulator and estimated the carrier density in the wells during optical input. This measurement can clarify the optical saturation effect in optical devices such as MQW electro-absorption modulators.Keywords
This publication has 6 references indexed in Scilit:
- Strained InGaAs/InAlAs MQW electroabsorption modulators with large bandwidth and low driving voltageIEEE Photonics Technology Letters, 1994
- Photogenerated carrier sweep-out times in strainedIn
x
Ga
1-
x
As/In
y
Al
1-
y
Asquantum well modulatorsElectronics Letters, 1994
- Multiple-quantum-well optical modulators and their monolithic integration with DFB lasers for optical-fiber communications (invited paper)Microwave and Optical Technology Letters, 1994
- Quantum well carrier sweep out: relation to electroabsorption and exciton saturationIEEE Journal of Quantum Electronics, 1991
- Electric field screening by photogenerated holes in multiple quantum wells: A new mechanism for absorption saturationApplied Physics Letters, 1990
- Low-loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulatorApplied Physics Letters, 1987