Stability and switching in overcritically doped Gunn diodes
- 1 January 1971
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 59 (8) , 1285-1286
- https://doi.org/10.1109/proc.1971.8399
Abstract
It is shown theoretically that Gunn diodes with arbitrarily high nL products arestable under constant voltage condition if the doping is sufficiently high, the doping fluctuations do not exceed a critical value of about 10 percent, and the high field branch of the V/E characteristic is not rising steepty. The device can be used as a sub-nanosecond switching element.Keywords
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