A novel cell technology using N-doped GeSbTe films for phase change RAM

Publisher Website

2 March 2004

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/vlsit.2003.1221143

Abstract

No abstract available

This publication has 1 reference indexed in Scilit:

Investigation of Crystallization Behavior of Sputter-Deposited Nitrogen-Doped Amorphous Ge₂Sb₂Te₅ Thin Films
Japanese Journal of Applied Physics, 2000