Band alignment in Si1−yCy/Si(001) heterostructures

16 March 1998

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 72 (11) , 1320-1322
https://doi.org/10.1063/1.120981

Abstract

Photoluminescence peak energy shifts under applied [110] and [100] uniaxial stress are interpreted within the framework of a multi-band Kohn–Luttinger model which takes into account the mixing of heavy, light, and spin-orbit split-off holes within the valence band. Experimental data are presented for 0.5%, 1%, and 1.7% Si1−yCy/Si samples which are best fitted with a conduction band offset of approximately 70%. At this value of the conduction band offset, we show that small amounts of space charge induced band bending are required to explain the experimentally observed results.

Keywords

This publication has 6 references indexed in Scilit:

Type II Band Alignment in ${Si}_{1 - x} {Ge}_{x} / Si (001)$ Quantum Wells: The Ubiquitous Type I Luminescence Results from Band Bending
Physical Review Letters, 1997
Band Alignment in ${Si}_{1 - y} C_{y} / Si (001)$ and ${Si}_{1 - x} {Ge}_{x} / {Si}_{1 - y} C_{y} / Si (001)$ Quantum Wells by Photoluminescence under Applied [100] and [110] Uniaxial Stress
Physical Review Letters, 1997
Spatially indirect radiative recombination of carriers localized in Si1−x−yGexCy/Si1−yCy double quantum well structure on Si substrates
Applied Physics Letters, 1996
Near-Band-Edge Photoluminescence from Pseudomorphic ${Si}_{1 - y} C_{y} / Si$ Quantum Well Structures
Physical Review Letters, 1996
Type I Band Alignment in ${Si}_{1 - x} {Ge}_{x} / S i (001)$ Quantum Wells: Photoluminescence under Applied [110] and [100] Uniaxial Stress
Physical Review Letters, 1995
Strain relaxation kinetics in Si1−xGex/Si heterostructures
Journal of Applied Physics, 1991