Strain and relaxation in InAs and InGaAs films grown on GaAs(001)
- 20 May 1996
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (21) , 3010-3012
- https://doi.org/10.1063/1.116680
Abstract
The strain and relaxation of InAs and InGaAs films grown on GaAs(001) have been examined by the x‐ray standing wave and extended x‐ray absorption fine‐structure techniques. While 1 monolayer (ML) films of both InAs and InGaAs are found to be tetragonally distorted in accordance with the prediction of macroscopic‐elastic theory, thicker InAs films are found to collapse to their natural‐lattice constant past a critical thickness Tc, of ∼2 ML’s. By 8 ML’s, bond‐length strain is no longer evident, and a large degree of structural disorder is observed.Keywords
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