Growth of n- and p-type Al(As)Sb by metalorganic chemical vapor deposition
- 12 February 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (7) , 932-934
- https://doi.org/10.1063/1.116235
Abstract
AlSb and AlAsxSb1−x epitaxial films grown by metalorganic chemical vapor deposition were successfully doped p‐ or n‐type using diethylzinc or tetraethyltin, respectively. AlSb films were grown at 500 ° C and 76 Torr using trimethylamine alane and triethylantimony. AlAs0.16Sb0.84 films lattice matched to InAs were grown at 600 ° C and 76 Torr by adding arsine. Secondary ion mass spectroscopy showed C and O levels below 2×1018 and 6×1018 cm−3, respectively, for undoped AlSb. Similar levels of O were found in AlAs0.16Sb0.84 films but C levels were an order of magnitude less in undoped and Sn‐doped AlAs0.16Sb0.84 films. Hall measurements of AlAs0.16Sb0.84 showed hole concentrations between 1×1017 to 5×1018 cm−3 for Zn‐doped material and electron concentrations in the low to mid‐ 1018 cm−3 for Sn‐doped material.Keywords
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