Ultrafast multireflection- and transparent thinfilm silicon photodiodes

1 January 1976

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1976.189072

Abstract

Thin-silicon-film mesa-shaped pin-photodiodes are presented, which exhibit high internal quantum efficiency at risetimes below 100 ps using a grated highly reflecting back contact and total reflection at the top. Theoretical and typical experimental data are given. Transparent photodiodes fabricated in a similar way are introduced, which can be inserted into an optical transmission path to take out a fraction of power without the need of an optical coupler.

Keywords

SILICON
PHOTODIODES
DIODES
OPTICAL REFLECTION
ABSORPTION
CAPACITANCE
ULTRAFAST OPTICS
REFLECTIVITY
LIGHTING
OPTICAL DEVICE FABRICATION

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