Surface chemistry of a new III–V MOCVD reactant: PhAsH2 on GaAs(100)
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 1036-1037
- https://doi.org/10.1016/0022-0248(91)90598-y
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Substituted arsines as As sources in MOMBEJournal of Crystal Growth, 1990
- Mass spectrometry during molecular-beam epitaxy: An alternative to reflection high-energy electron diffractionJournal of Vacuum Science & Technology B, 1988
- The use of organic As precursors in the low pressure MOCVD of GaAsJournal of Crystal Growth, 1988
- Formation of alternative surface oxide phases on GaAs by adsorption of O2 or H2O: A UPS, XPS, and SIMS studyJournal of Vacuum Science and Technology, 1982
- Oxygen interaction with GaAs surfaces: An XPS/UPS studyJournal of Vacuum Science and Technology, 1979