High resolution transmission electron microscopy study in VC-doped WC–Co compound
Open Access
- 1 January 2000
- journal article
- research article
- Published by Taylor & Francis in Science and Technology of Advanced Materials
- Vol. 1 (2) , 97-104
- https://doi.org/10.1016/s1468-6996(00)00006-1
Abstract
Microstructure evolution in VC-doped WC–Co was investigated using high-resolution transmission electron microscopy (HRTEM) associated with X-ray energy dispersive spectroscopy (EDS) with a special interest in WC/Co and WC/WC boundaries. It was found that the morphology of carbide grains changed largely by the addition of VC. The WC/Co interfaces tend to form facetting with fine multi-steps of (0001) and {} habits by VC-doping. In addition, the facetting morphology of WC/Co interfaces was confirmed to be already formed in solid state from an examination with a quenched compound from 1200˚C, which is below the eutectic temperature of 1320˚C between WC and Co system. EDS analysis with the sub-nano scale probe revealed that the doped V was strongly concentrated to the two habits. However, the amount of concentrated V was different among them, i.e. more at (0001) habit than at { } habits. V is considered to be concentrate at the boundary during grain growth to accompany the migration of the two habits ...Keywords
This publication has 2 references indexed in Scilit:
- Transmission Electron MicroscopyPublished by Springer Nature ,1996
- Fine Grained WC–VC–Co HardmetalPowder Metallurgy, 1996