Edge effects in a gated submicron resonant tunneling diode
- 18 May 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (20) , 2508-2510
- https://doi.org/10.1063/1.106949
Abstract
We have investigated the current‐voltage [I(V)] characteristics of a gated GaAs/(AlGa)As resonant tunneling diode. As the negative gate voltage is progressively increased I(V) becomes asymmetric. In particular the peak‐to‐valley ratio in forward bias is decreased from ≂20 to ≂1, but in reverse bias remains constant ≂20. This arises from a lateral variation of the voltage drop across the emitter tunnel barrier, which in forward bias leads to a smearing of the resonance. We discuss the relationship between our experiment and the low peak‐to‐valley ratios of two‐terminal submicron resonant tunneling diodes observed by other groups.Keywords
This publication has 7 references indexed in Scilit:
- Confinement and Coulomb interactions in Schottky-gated, laterally confined double-barrier quantum well heterostructuresSemiconductor Science and Technology, 1992
- Asymmetry in the I(V) characteristics of a gated resonant tunnelling diodeSemiconductor Science and Technology, 1992
- Resonant tunneling in submicron double-barrier heterostructuresApplied Physics Letters, 1991
- Gated resonant tunnelling devicesElectronics Letters, 1991
- Fabrication of a gated gallium arsenide heterostructure resonant tunneling diodeJournal of Vacuum Science & Technology B, 1990
- Resonant tunneling through one- and zero-dimensional states constricted by As/GaAs/As heterojunctions and high-resistance regions induced by focused Ga ion-beam implanationPhysical Review B, 1990
- Observation of discrete electronic states in a zero-dimensional semiconductor nanostructurePhysical Review Letters, 1988