Low-temperature ion mixing of yttrium and silicon
- 1 February 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (3) , 1288-1292
- https://doi.org/10.1063/1.345678
Abstract
Ion mixing of yttrium and amorphous silicon bilayers was measured as a function of fluence and temperature using 600-keV Xe++ ions between 80 and 498 K. At 80 K the mixing rate was in excellent agreement with a theoretical model based on thermal spike mixing. For temperatures up to ≊372 K, the temperature-dependent contributions accounted for less than 50% of the overall mixing rate. For mixing at or above 400 K, our results revealed the formation of an ion-beam-induced orthorhombic Y-Si phase, which is not normally formed during thermal anneals of such bilayers.This publication has 25 references indexed in Scilit:
- Room temperature ion beam mixing of aluminum with titanium hydrideNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Mechanisms in the ion beam mixing of Al in SiNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Diffusion in Collision Cascades: a Thermodynamic ViewpointDefect and Diffusion Forum, 1988
- Ion beam mixing of hydrogenated multilayer FeTi and NiTi filmsMaterials Science and Engineering, 1987
- Thin films of rare earth metal silicidesThin Solid Films, 1986
- Fundamental aspects of ion beam mixingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- The Roles of Energetic Displacement Cascades in Ion Beam Modifications of MaterialsMRS Proceedings, 1986
- Algorithms for the rapid simulation of Rutherford backscattering spectraNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Technique for profiling 1H with 2.5-MeV Van de Graaff acceleratorsApplied Physics Letters, 1979