Comparison of secondary ion yields from conducting, semiconducting and nonconducting targets bombarded with 40 keV argon ions
- 1 April 1972
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 13 (3-4) , 167-170
- https://doi.org/10.1080/00337577208231176
Abstract
Conducting, semiconducting and nonconducting targets were bombarded at an angle of 45° to the surface with a beam of Ar+ ions, characterized by a beam density of 100 pA/cm2 and a beam energy of 40 keV. The residual gas pressure was 5×10−4 torr. The ion yield or the degree of ionization of sputtered atoms from the three kinds of targets were measured. The results indicate that the emission of secondary ions from the three types of bombarded surfaces can be described using the same model. The degree of ionization and the energy distribution of the sputtered target atoms confirm that the emission is a combination of two mechanisms: (i) momentum transfer by the primary ions to target atoms, and (ii) strong local overheating of sputtered centres. The yield of various secondary ion species from compound targets is not proportional to the concentration of the respective atoms in the targets.Keywords
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