Edge Profiles in the Plasma Etching of Polycrystalline Silicon

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Abstract
Five gas mixtures for plasma etching polycrystalline silicon films have been compared with emphasis on the edge profiles and the linewidth loss. The two isotropic etches, and produce edge profiles that follow an arc of a circle and have line width losses that are nearly twice the thickness of polycrystalline silicon etched. In contrast the anisotropic etches, and produce profiles that are nearly vertical and have line width losses that are dependent on the etch rate of the photoresist mask. Samples etched in have circular profiles and have linewidth losses that are initially very small but increase rapidly as the samples are overetched. Measurements of the resist erosion rate indicate that the photoresist mask etches isotropically in even though the polycrystalline silicon is etching anisotropically. Of the five etches examined, is superior for etching very fine features.

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