DIRECT DETERMINATION OF OPTICAL GAIN IN SEMICONDUCTOR CRYSTALS
- 1 June 1971
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (11) , 475-477
- https://doi.org/10.1063/1.1653501
Abstract
We report a new technique for measuring the stimulated emission spectrum and optical gain of semiconductor materials. Amplified spontaneous emission is used to determine the gain factor by relating the measured variation in light output to variation in the length of the excitation beam. Results for CdS crystals at 2°K are presented that indicate net gains as high as 160 cm−1 at λ = 4907 Å are possible with ∼ 12‐MW/cm2 optical pump power density from a nitrogen laser.Keywords
This publication has 5 references indexed in Scilit:
- A NEW MODEL FOR THE TEMPERATURE-DEPENDENT CdS LASERApplied Physics Letters, 1970
- SINGLE PASS GAIN OF EXCIPLEX 4-MU AND RHODAMINE 6G DYE LASER AMPLIFIERSApplied Physics Letters, 1970
- Exciton-Exciton Interaction in CdS, CdSe, and ZnOPhysical Review Letters, 1970
- Radiative Recombination in Highly Excited CdSPhysical Review B, 1969
- SIX dB/CM SINGLE-PASS GAIN AT 7229 Å IN LEAD VAPORApplied Physics Letters, 1967