Laser-Induced Electronic Emissions of Si Atoms from Si(100) Surfaces
- 1 June 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (6B) , L859-862
- https://doi.org/10.1143/jjap.32.l859
Abstract
We have carried out highly sensitive measurements of Si° atoms from the Si(100) surfaces emitted by irradiation with 2.48 eV laser pulses. The results indicate all characteristics of the defect-initiated emissions of electronic origin obtained for the emission of Ga° atoms from GaP and GaAs surfaces: we found that the yield is a superlinear function of the fluence and decreases first rapidly and then slowly as the irradiation with laser pulses is repeated. The emission yield after eliminating the rapidly decaying component is found to be enhanced by deposition of submonolayer Br atoms.Keywords
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