S-Doping of MBE-GaSb with H2S Gas
- 1 December 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (12) , L893
- https://doi.org/10.1143/jjap.20.l893
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Effects of H2S adsorption on surface properties of GaAs {100} grown i n s i t u by MBEJournal of Vacuum Science and Technology, 1980
- Molecular Beam Epitaxy of GaSb and GaSbxAs1-xJapanese Journal of Applied Physics, 1978
- ’’Surface exchange’’ doping of MBE GaAs from S and Se ’’captive sources’’Applied Physics Letters, 1978
- Sulfur Donor Level Associated with (100) Conduction Band of GaSbPhysical Review Letters, 1966
- Band Structure and Transport Properties of Some 3–5 CompoundsJournal of Applied Physics, 1961