Relationship of ambient deposition conditions to formation of thermally activated voids in Al/Si interconnects
- 1 January 1990
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 8 (1) , 106-107
- https://doi.org/10.1116/1.584854
Abstract
The failure of microelectronics chips due to formation of stress−induced voids in Al/Si alloy interconnects is discussed. The propensity for thermal voiding in Al/Si is associated with a particular microstructural and compositional state derived from poor vacuum coditions during deposition.(AIP)This publication has 0 references indexed in Scilit: