Gunn effect in heterojunction bipolar transistors
- 7 July 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (14) , 1183-1184
- https://doi.org/10.1049/el:19940794
Abstract
The Gunn effect in III-IV heterojunction bipolar transistors is investigated using hydrodynamic simulations. It is shown that Gunn domains nucleate and propagate in the collector drift region of an npn AlGaAs/GaAs transistor in which the electric field at the base-collector space charge region is properly engineered.Keywords
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