Time-of-flight studies of compensated a-Si:H
- 1 July 1984
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 66 (1-2) , 175-180
- https://doi.org/10.1016/0022-3093(84)90317-x
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Localized states in compensatedPhysical Review B, 1984
- Effects of doping on transport and deep trapping in hydrogenated amorphous siliconApplied Physics Letters, 1983
- Doping and the Fermi Energy in Amorphous SiliconPhysical Review Letters, 1982
- Defect states in doped and compensated-Si: HPhysical Review B, 1981
- Hole carrier transport in amorphous silicon filmsPhilosophical Magazine Part B, 1979