Characterizing and controlling Cu/(In+Ga) ratio during CIS manufacturing
- 11 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01608371,p. 466-469
- https://doi.org/10.1109/pvsc.2000.915872
Abstract
Characterization and control of a key process parameter during CIS manufacturing is described. A model is developed to calculate Cu/(In+Ga) (CIG) ratio changes during sputter deposition runs, as a function of target age, using methods of statistical process control. The model allows prediction of the maximum deposition time permissible while guaranteeing acceptable CIG ratios. Prediction of CIG ratio changes improves productivity by reducing the risk of yield loss caused by unacceptable CIG ratio and increasing the process throughput.Keywords
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