A set of processes has been explored that enhances the utility of self‐assembled‐monolayer electron‐beam resists for patterning silicon. A self‐assembled monolayer resist of octadecylsiloxane was exposed using a scanning electron microscope with a 20 keV beam energy and dose of 320 μC/cm2. After the patterned monolayer was developed using ultraviolet light and ozone, it served as a wet etch mask for the underlying native oxide. Linewidths of ∼30 nm were etched in silicon using the patterned oxide as a reactive ion etch mask. The maximum etch depth achieved in silicon was 90 nm using this process.