The adsorption and electronic structure of antimony layers on clean cleaved indium phosphide (110) surfaces

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Abstract
The room temperature adsorption of antimony on clean cleaved (110) surfaces of indium phosphide has been studied. The first monolayer forms an ordered 1*1 structure, and its form has been investigated by low-energy electron diffraction, Auger electron spectroscopy, and core level photoemission. The electronic structure of the Sb:InP(110) system has also been investigated by angle-resolved photoelectron spectroscopy. The electronic states on the clean surface are replaced by Sb-induced ones. The measured position of the occupied and empty interface states formed are in excellent agreement with those recently calculated by Mailhiot et al. (1984) and appear to confirm the crystallographic structure determined in those studies. Brief measurements of Ab-Sb-InP (110) Schottky barriers, with the Sb thickness being one or two monolayers, have also been carried out.