Investigation of traps producing current collapsein AlGaN/GaN high electron mobility transistors
- 10 May 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (10) , 661-662
- https://doi.org/10.1049/el:20010434
Abstract
Current collapse in AlGaN/GaN HEMTs has been investigated using photo-ionisation spectroscopy techniques to probe the spatial origins of the traps producing this effect. The results indicate that the responsible traps reside in the high-resistivity GaN buffer layer and are identical to those traps causing current collapse in GaN MESFETs.Keywords
This publication has 4 references indexed in Scilit:
- Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistorsJournal of Applied Physics, 2000
- Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistorsApplied Physics Letters, 1999
- Fabrication and characterization of GaN FETsSolid-State Electronics, 1997
- Current/voltage characteristic collapse in AlGaN/GaNheterostructure insulatedgate field effect transistors at high drain biasElectronics Letters, 1994