Parametric amplifier using a silver bonded diode
- 1 March 1961
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IRE Transactions on Electron Devices
- Vol. 8 (2) , 105-109
- https://doi.org/10.1109/t-ed.1961.14716
Abstract
Recently, the parametric amplifier has merited attention because of its low-noise characteristics. A novel diode has been designed which is suitable for use in a parametric amplifier. The diode is a bonded type and is composed of a silver-gallium whisker and an N-type germanium. The cutoff frequency of the silver bonded diode is higher than 150 kMc. The parametric amplifier was made using these diodes at 6 kMc and 11 kMc, and stable gain of more than 20 db was obtained. The noise figures were approximately 5 db and 6.5 db at 6 kMc and 11 kMc, respectively.Keywords
This publication has 3 references indexed in Scilit:
- Properties of a silver bonded diode for parametric amplificationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1959
- Gain, Band Width, and Noise Characteristics of the Variable-Parameter AmplifierJournal of Applied Physics, 1958
- Properties of Welded Contact Germanium RectifiersJournal of Applied Physics, 1946