Thermal oxidation of 3C silicon carbide single-crystal layers on silicon
- 1 October 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (7) , 757-759
- https://doi.org/10.1063/1.95394
Abstract
Thermal oxidation of thick single-crystal 3C SiC layers on silicon substrates was studied. The oxidations were conducted in a wet O2 atmosphere at temperatures from 1000 to 1250 °C for times from 0.1 to 50 h. Ellipsometry was used to determine the thickness and index of refraction of the oxide films. Auger analysis showed them to be homogeneous with near stoichiometric composition. The oxide growth followed a linear parabolic relationship with time. Activation energy of the parabolic rate constant was found to be 50 kcal/mole, while the linear rate constant was 74 kcal/mole. The latter value corresponds approximately to the energy required to break a Si–C bond. Electrical measurements show an effective density of 4–6×1011 cm−2 for fixed oxide charges at the oxide-carbide interface, and the dielectric strength of the oxide film is approximately 6×106 V/cm.Keywords
This publication has 10 references indexed in Scilit:
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983
- Thermal Oxidation of SiC and Electrical Properties of Al–SiO2–SiC MOS StructureJapanese Journal of Applied Physics, 1982
- C-V characteristics of SiC metal-oxide-semiconductor diode with a thermally grown SiO2 layerApplied Physics Letters, 1981
- Interface characteristics of thermal Si02 on SiCJournal of Vacuum Science and Technology, 1978
- Metal oxide-semiconductor capacitors on silicon carbideSolid-State Electronics, 1976
- Thermal Oxidation and Electrolytic Etching of Silicon CarbideJournal of the Electrochemical Society, 1975
- Oxidation of 6H‐α Silicon Carbide PlateletsJournal of the American Ceramic Society, 1975
- Oxide Films on Beta-Silicon CarbideJournal of the Electrochemical Society, 1971
- Low-Temperature Cathode Performance of Porous Ag∕Ag[sub 2]O ElectrodesJournal of the Electrochemical Society, 1971
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965