Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputtering
- 31 December 1976
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 20 (10) , 969-972
- https://doi.org/10.1016/0038-1098(76)90485-3
Abstract
No abstract availableKeywords
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