Electrically and optically active defects in silicon-on-sapphire films
- 1 January 1968
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 3-4, 214-218
- https://doi.org/10.1016/0022-0248(68)90133-4
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Structure, conductivity and hall effect of electron bombardment evaporated silicon films on sapphireSolid-State Electronics, 1967
- Electrical Properties of Silicon Films Grown Epitaxially on SapphireJournal of Applied Physics, 1967
- Twinning in Silicon Epitaxially Deposited on SapphireJournal of Applied Physics, 1965
- Deformation of and Stress in Epitaxial Silicon Films on Single-Crystal SapphireJournal of Applied Physics, 1965
- Recombination in Plastically Deformed GermaniumPhysical Review B, 1957
- Experimental Determination of Injected Carrier Recombination Rates at Dislocations in SemiconductorsPhysical Review B, 1957
- Energy Levels in Electron-Bombarded SiliconPhysical Review B, 1957
- Optical Properties of Plastically Deformed GermaniumPhysical Review B, 1955
- Dislocations in Plastically Deformed GermaniumPhysical Review B, 1954
- Some Predicted Effects of Temperature Gradients on Diffusion in CrystalsPhysical Review B, 1953