Implant Isolation of GaAs
- 1 November 1988
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 135 (11) , 2835-2840
- https://doi.org/10.1149/1.2095443
Abstract
The ion species and dose dependence of implant‐induced high resistivity regions in doped were investigated by Hall effect measurements, Rutherford backscattering, and secondary ion mass spectrometry. The initial conductivity of the is restored by annealing at 600°C, regardless of implant dose or species (O, F, or Ne), and the maximum resistivity in the material occurs for 500°C annealing. The temperature dependence of the carrier concentration in these samples shows the presence of several deep states responsible for the compensation effect.Keywords
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