Hole transport properties of bulk zinc-blende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure
- 15 October 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (8) , 4429-4436
- https://doi.org/10.1063/1.363422
Abstract
In this paper, we present calculations of the hole transport properties of bulk zinc-blende and wurtzite phase GaN at field strengths at which impact ionization does not occur significantly. The calculations are made using an ensemble Monte Carlo simulator, including the full details of the band structure and a numerically determined phonon scattering rate based on an empirical pseudopotential method. Band intersection points—including band crossings and band mixings—are treated by carefully evaluating the overlap integral between the initial and possible final drift states. In this way, the hole trajectories in phase space can be accurately traced. It is found that the average hole energies are significantly lower than the corresponding electron energies for the field strengths examined. This result is most probably due to the drastic difference in curvature between the uppermost valence bands and the lowest conduction band. The relatively flat valence bands impede hole-heating, leading to low average hole energy.This publication has 24 references indexed in Scilit:
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structureJournal of Applied Physics, 1995
- Theoretical study of electron transport in gallium nitrideJournal of Applied Physics, 1995
- Emerging gallium nitride based devicesProceedings of the IEEE, 1995
- Theoretical study of hole initiated impact ionization in bulk silicon and GaAs using a wave-vector-dependent numerical transition rate formulation within an ensemble Monte Carlo calculationJournal of Applied Physics, 1995
- Monte Carlo simulation of electron transport in gallium nitrideJournal of Applied Physics, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Hot electron microwave conductivity of wide bandgap semiconductorsSolid-State Electronics, 1976
- Monte Carlo calculation of the velocity-field relationship for gallium nitrideApplied Physics Letters, 1975
- Crystal Potential and Energy Bands of Semiconductors. III. Self-Consistent Calculations for SiliconPhysical Review B, 1960