Application of a reaction-diffusion model for negative chemically amplified resists to determine electron-beam proximity correction parameters
- 1 November 1996
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 14 (6) , 4252-4256
- https://doi.org/10.1116/1.588585
Abstract
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