SOME OPTICAL PROPERTIES OF ALUMINUM ARSENIDE
- 1 November 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (9) , 358-360
- https://doi.org/10.1063/1.1653433
Abstract
Epitaxial AlAs was grown on GaAs substrates, and polycrystalline AlAs films were deposited on quartz. The visible optical absorption edge indicated that the direct band gap was 3.5 eV while the indirect gap was 2.2 eV. Infrared interference fringes were measured and the high‐frequency dielectric constant was determined to be 15.2. The transverse restrahl frequency was 400 cm−1.Keywords
This publication has 4 references indexed in Scilit:
- The fundamental absorption edge of AlAs and AlPSolid State Communications, 1970
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1969
- Coupling of Plasmons to Polar Phonons in Degenerate SemiconductorsPhysical Review B, 1965
- Über AluminiumarsenidZeitschrift für anorganische und allgemeine Chemie, 1964