Magnetophonon resonance in crossed high electric and magnetic fields in small n+nn+GaAs structures
- 1 August 1987
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (8) , 542-546
- https://doi.org/10.1088/0268-1242/2/8/012
Abstract
A new mechanism is proposed for the additional structure and the change of sign in magnetophonon resonance extrema at high electric field observed by Eaves and co-workers (1984). The mechanism is based on electric-field-induced inelastic inter-Landau-level scattering, LO phonon scattering, which explains the main features of the experimental results quantitatively. The general expression is derived from the Kubo formula and by using the treatment of Barker.Keywords
This publication has 4 references indexed in Scilit:
- Electric field-induced quasi-elastic inter-landau level scattering in the space-charge-limited magnetoconductivity of n+n−n+ InP structuresSuperlattices and Microstructures, 1986
- Hot-electron magnetophonon spectroscopy on micron- and sub-micron-size n+nn+GaAs structuresJournal of Physics C: Solid State Physics, 1984
- High-Field Resonant Magnetotransport Measurements in SmallGaAs Structures: Evidence for Electric-Field-Induced Elastic Inter-Landau-Level ScatteringPhysical Review Letters, 1984
- The oscillatory structure of the magnetophonon effect. I. Transverse configurationJournal of Physics C: Solid State Physics, 1972