n-type doping of highly tetrahedral diamond-like amorphous carbon
- 29 March 1993
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 5 (13) , L169-L174
- https://doi.org/10.1088/0953-8984/5/13/004
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Filtered arc deposition of amorphous diamondApplied Physics Letters, 1992
- Properties of tetrahedral amorphous carbon prepared by vacuum arc depositionDiamond and Related Materials, 1991
- Compressive-stress-induced formation of thin-film tetrahedral amorphous carbonPhysical Review Letters, 1991
- Amorphous diamond-Si semiconductor heterojunctionsApplied Physics Letters, 1991
- Hard amorphous (diamond-like) carbonsProgress in Solid State Chemistry, 1991
- Ion spectra of vacuum arc plasma with compound and alloy cathodesJournal of Applied Physics, 1989
- Ion flux from the cathode region of a vacuum arcIEEE Transactions on Plasma Science, 1989
- Hall effect and impurity conduction in substitutionally doped amorphous siliconPhilosophical Magazine, 1977
- Interface states in abrupt semiconductor heterojunctionsSolid-State Electronics, 1964