Theoretical Calculation of the Direct Production of Divacancies in Silicon
- 1 December 1966
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (13) , 4998-4999
- https://doi.org/10.1063/1.1708183
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Electron Paramagnetic Resonance and Electrical Properties of the Dominant Paramagnetic Defect in Electron-Irradiated-Type SiliconPhysical Review B, 1966
- Effect of electron energy on defect introduction in siliconJournal of Physics and Chemistry of Solids, 1966
- Production of Divacancies and Vacancies by Electron Irradiation of SiliconPhysical Review B, 1965
- PROTON INDUCED LATTICE DISPLACEMENTS IN SILICONApplied Physics Letters, 1963
- Radiation Defect Introduction Rates in- and-Type Silicon in the Vicinity of the Radiation Damage ThresholdPhysical Review B, 1962
- Electron Bombardment of SiliconPhysical Review B, 1959
- Radiation Damage in Ge and Si Detected by Carrier Lifetime Changes: Damage ThresholdsPhysical Review B, 1958