Fast power cycling test of IGBT modules in traction application
- 1 January 1997
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 425-430
- https://doi.org/10.1109/peds.1997.618742
Abstract
The numerous advantages of insulated gate bipolar transistor (IGBT) power modules and their ongoing development for higher voltage and current ratings make them interesting for traction applications. These applications imply high reliability requirements. One important requirement is the ability to withstand power cycles. Power cycles cause temperature changes which lead to a mechanical stress that can result in a failure. Lifting of bond wires is thereby the predominant failure mechanism. A fast power cycling test method activating the main failure mechanism has been developed which allows reproduction of millions of temperature changes in a short time. The applicability of fast testing is supported by a mechanical analysis. Test results show the number of cycles to failure as a function of temperature changes for an IGBT single switch. A descriptive model is deduced from the results.Keywords
This publication has 1 reference indexed in Scilit:
- Reliability of thick Al wire bonds in IGBT modules for traction motor drivesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002