Impact of polysilicon depletion in thin oxide MOS technology

Publisher Website

31 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/vtsa.1993.263633

Abstract

No abstract available

This publication has 3 references indexed in Scilit:

Anomalous C-V characteristics of implanted poly MOS structure in n/sup +//p/sup +/ dual-gate CMOS technology
IEEE Electron Device Letters, 1989
Polycrystalline Silicon for Integrated Circuit Applications
Published by Springer Nature ,1988
Subbreakdown drain leakage current in MOSFET
IEEE Electron Device Letters, 1987