Suppression of Emitter Size Effect on Current Gain in AlGaAs/GaAs HBTs
- 1 October 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (10R)
- https://doi.org/10.1143/jjap.24.1368
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Emitter-Base Junction Size Effect on Current Gain Hfe of AlGaAs/GaAs Heterojunction Bipolar TransistorsJapanese Journal of Applied Physics, 1985
- GaAs/(Ga,Al)As heterojunction bipolar transistors with buried oxygen-implanted isolation layersIEEE Electron Device Letters, 1984
- Optimum emitter grading for heterojunction bipolar transistorsApplied Physics Letters, 1983
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982