High-temperature (130°C) CW operation of 1.53 μm InGaAsP ridge-waveguide lasers using strained quaternary quantum wells
- 16 September 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (19) , 1691-1693
- https://doi.org/10.1049/el:19931125
Abstract
Minimum threshold current density of 0.57kA/cm2 and high T0 values up to 74K were obtained from 400μm long broad area lasers with MOVPE grown compressively strained all-quaternary GaInAsP SCH-MQW layer structures for 1.53μm emission wavelength. With 3μm×400μm RW laserdiodes (T0>90K) high-temperature CW operation up to 130°C was achieved.Keywords
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