Reactive Ion Etching Using Electron Cyclotron Resonance Hydrogen Plasma with n-Butyl Acetate Reactive Gas
- 1 March 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (3R)
- https://doi.org/10.1143/jjap.31.932
Abstract
Electron cyclotron resonance hydrogen plasma reactive ion etching (RIE) with n-butyl acetate reactive gas has been demonstrated. The etching mechanism is discussed for RIE of transparent conducting oxide films. The RIE technique exhibits excellent material selectivity resulting from the ability to control the etching mechanism by altering the accelerating voltage frequency. To demonstrate the practical application of RIE, an electroluminescent display fabrication is described.Keywords
This publication has 4 references indexed in Scilit:
- Reactive Ion Etching of Transparent Conducting Tin Oxide Films Using Electron Cyclotron Resonance Hydrogen PlasmaJapanese Journal of Applied Physics, 1988
- Low Voltage Driven MOCVD-Grown ZnS:Mn Thin-Film Electroluminescent Devices Using Insulating BaTiO3 Ceramic SheetsJapanese Journal of Applied Physics, 1988
- Growth of hexagonal ZnS thin films by MOCVD using CS2 gas as a sulfur sourceJournal of Crystal Growth, 1988
- Highly Conductive and Transparent Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron SputteringJapanese Journal of Applied Physics, 1984