Thin film reactions on silicon surfaces and the quality of metal-semiconductor interfaces
- 3 March 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 168 (1) , 212-224
- https://doi.org/10.1016/0039-6028(86)90852-6
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Epitaxial PtSi and Pd2Si formed by rapid thermal annealingMaterials Letters, 1985
- Phase equilibria in thin-film metallizationsJournal of Vacuum Science & Technology B, 1984
- Oxygen redistribution during sintering of Ti/Si structuresJournal of Vacuum Science & Technology B, 1984
- Impurity effects in transition metal silicidesJournal of Vacuum Science & Technology B, 1984
- Interactions in metallization systems for integrated circuitsJournal of Vacuum Science & Technology B, 1984
- Applications of Rutherford backscattering spectrometry to refractory metal silicide characterizationJournal of Vacuum Science & Technology B, 1984
- Influence of the interfacial oxide on titanium silicide formation by rapid thermal annealingJournal of Vacuum Science & Technology B, 1984
- Dopant redistribution in silicides: Materials and process issuesJournal of Vacuum Science & Technology B, 1984
- Preferential sputtering of PtSi, NiSi2, and AgAuJournal of Vacuum Science and Technology, 1982
- Influence of atomic mixing and preferential sputtering on depth profiles and interfacesJournal of Vacuum Science and Technology, 1979