Compositional and electrical analysis of the multilayers of a CdS/CuInSe2 solar cell

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Abstract
The compositional profiles and the electrical properties of the bilayers of CdS and CuInSe2 films in CdS/CuInSe2 solar cells are presented and compared with those of the individual layers alone. The CuInSe2 bilayer shows that the two individual layers have mixed, except for the last‐to‐deposit 0.2–0.4 μm, which is semi‐insulating and copper poor. This bilayer remains p type and highly resistive during the cell processing steps. The CdS bilayer consists of an almost stoichiometric layer close to the junction and a top In‐doped low‐resistivity layer. The CdS/CuInSe2 may possibly operate as a P‐S‐N device, where the S layer is defined largely by a semi‐insulating CuInSe2 layer.

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