Ion beam damage effects during the low energy cleaning of GaAs

1 February 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 3 (2) , 48-50
https://doi.org/10.1109/edl.1982.25473

Abstract

It is shown that ion-beam damage effects in GaAs are significant, even for low energy ion cleaning (≃ 100 eV). Damage from this process results in increasing the saturation current (extrapolated from the forward current) of Au-n-GaAs Schottky barrier diodes by two orders of magnitude. The depth of damage during this process is shown to be unexpectedly large (900 Å) for these low ion-beam energies.

Keywords

ION BEAMS
CLEANING
GALLIUM ARSENIDE
SURFACE TREATMENT
SUBSTRATES
CURRENT DENSITY
PHOTOVOLTAIC CELLS
SCHOTTKY BARRIERS
SCHOTTKY DIODES
ETCHING

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