Abstract
Amorphous Sb films ranging in thickness between 170 and 14 000 Å were prepared at 77°K in three different ways: getter sputtering, evaporation from Sb, and evaporation from PtSb. The electrical resistivity of these various films is well fitted between 30 and 160 °K by the relation ρ=ρ0exp[(T0T)14] with T0107 °K.